Toshiba Semiconductor and Storage TPCF8B01(TE85L,F,M
MPNTPCF8B01(TE85L,F,M
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSIII |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 2.7A (Ta) |
| Power dissipation | 330mW (Ta) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Schottky Diode (Isolated) |
| Case | 8-SMD, Flat Lead |
| Vgs(th) (Max) @ id | 1.2V @ 200µA |
| Rds on (Max) @ id, vgs | 110mOhm @ 1.4A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 6 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 470 pF @ 10 V |