Toshiba Semiconductor and Storage TPCC8009,LQ(O
MPNTPCC8009,LQ(O
Obsolete
$0.9300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSIV |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Current - continuous drain (Id) @ 25°C | 24A (Ta) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 3V @ 200µA |
| Rds on (Max) @ id, vgs | 7mOhm @ 12A, 10V |
| Gate charge (Qg) (Max) @ vgs | 26 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1270 pF @ 10 V |