Toshiba Semiconductor and Storage TPCC8008(TE12L,QM)
MPNTPCC8008(TE12L,QM)
Obsolete
$1.0400Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSIV |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 25A (Ta) |
| Power dissipation | 700mW (Ta), 30W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-VDFN Exposed Pad |
| Vgs(th) (Max) @ id | 2.5V @ 1A |
| Rds on (Max) @ id, vgs | 6.8mOhm @ 12.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 30 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1600 pF @ 10 V |