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TPCA8028-H~1TE12LQM

Toshiba Semiconductor and Storage TPCA8028-H(TE12LQM

MPNTPCA8028-H(TE12LQM
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TPCA8028-H(TE12LQM specifications
ParameterValue
SeriesU-MOSIV-H
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C50A (Ta)
Power dissipation1.6W (Ta), 45W (Tc)
Operating temperature150°C(TJ)
PackageCut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id2.3V @ 1mA
Rds on (Max) @ id, vgs2.8mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs88 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7800 pF @ 10 V