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Toshiba Semiconductor and Storage TPCA8026(TE12L,Q,M — Discrete Semiconductors

Toshiba Semiconductor and Storage TPCA8026(TE12L,Q,M

MPNTPCA8026(TE12L,Q,M
Obsolete
$1.9000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TPCA8026(TE12L,Q,M specifications
ParameterValue
SeriesU-MOSIV
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C45A (Ta)
Power dissipation1.6W (Ta), 45W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs2.2mOhm @ 23A, 10V
Gate charge (Qg) (Max) @ vgs113 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4200 pF @ 10 V