Toshiba Semiconductor and Storage TPCA8010-H(TE12L,Q
MPNTPCA8010-H(TE12L,Q
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | π-MOSV |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 5.5A (Ta) |
| Power dissipation | 1.6W (Ta), 45W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 4V @ 1mA |
| Rds on (Max) @ id, vgs | 450mOhm @ 2.7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 10 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 600 pF @ 10 V |