TPC8134~6LQ~1S
Toshiba Semiconductor and Storage TPC8134,LQ(S
MPNTPC8134,LQ(S
Active
$0.2801Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSVI |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 5A (Ta) |
| Power dissipation | 1W (Ta) |
| Operating temperature | 150°C(TJ) |
| Package | Tape & Reel (TR) |
| Vgs | +20V, -25V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 2V @ 100µA |
| Rds on (Max) @ id, vgs | 52mOhm @ 2.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 20 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 890 pF @ 10 V |