TPC8132,LQ(S

Toshiba Semiconductor and Storage · U-MOSVI Series

MOSFET P-CH 40V 7A 8SOP

Toshiba Semiconductor and Storage TPC8132,LQ(S
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

TPC8132,LQ(S specifications
Parameter / AttributeSpecification / Value
SeriesU-MOSVI
FET typeP-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C7A (Ta)
Power dissipation1W (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs+20V, -25V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2V @ 200µA
Rds on (Max) @ id, vgs25mOhm @ 3.5A, 10V
Gate charge (Qg) (Max) @ vgs34 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1580 pF @ 10 V
TPC8132,LQ(S
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