Toshiba Semiconductor and Storage TPC8129,LQ(S
MPNTPC8129,LQ(S
Active
MOSFET P-CH 30V 9A 8SOP
$0.5300Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSRoHS Compliant
SeriesU-MOSVI
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSVI |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 9A (Ta) |
| Power dissipation | 1W (Ta) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | +20V, -25V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 2V @ 200µA |
| Rds on (Max) @ id, vgs | 22mOhm @ 4.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 39 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1650 pF @ 10 V |