Toshiba Semiconductor and Storage TPC6110(TE85L,F,M)
MPNTPC6110(TE85L,F,M)
Obsolete
$18.7000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSVI |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Current - continuous drain (Id) @ 25°C | 4.5A (Ta) |
| Power dissipation | 700mW (Ta) |
| Operating temperature | 150°C(TJ) |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-23-6 Thin, TSOT-23-6 |
| Vgs(th) (Max) @ id | 2V @ 100µA |
| Rds on (Max) @ id, vgs | 56mOhm @ 2.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 14 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 510 pF @ 10 V |