Toshiba Semiconductor and Storage TPC6109-H(TE85L,FM
MPNTPC6109-H(TE85L,FM
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSIII-H |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 5A (Ta) |
| Power dissipation | 700mW (Ta) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-23-6 Thin, TSOT-23-6 |
| Vgs(th) (Max) @ id | 1.2V @ 200µA |
| Rds on (Max) @ id, vgs | 59mOhm @ 2.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 12.3 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 490 pF @ 10 V |