Toshiba Semiconductor and Storage 2SK3662(F)
MPN2SK3662(F)
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSIII |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 4V, 10V |
| Current - continuous drain (Id) @ 25°C | 35A (Ta) |
| Power dissipation | 35W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 2.5V @ 1mA |
| Rds on (Max) @ id, vgs | 12.5mOhm @ 18A, 10V |
| Gate charge (Qg) (Max) @ vgs | 91 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5120 pF @ 10 V |