Toshiba Semiconductor and Storage 2SK2963(TE12L,F)
MPN2SK2963(TE12L,F)
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4V, 10V |
| Current - continuous drain (Id) @ 25°C | 1A (Ta) |
| Power dissipation | 500mW (Ta) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-243AA |
| Vgs(th) (Max) @ id | 2V @ 1mA |
| Rds on (Max) @ id, vgs | 700mOhm @ 500mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 6.3 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 140 pF @ 10 V |