Toshiba Semiconductor and Storage 2SK2916(F)
MPN2SK2916(F)
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 14A (Ta) |
| Power dissipation | 80W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-3P-3, SC-65-3 |
| Vgs(th) (Max) @ id | 4V @ 1mA |
| Rds on (Max) @ id, vgs | 400mOhm @ 7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 58 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2600 pF @ 10 V |