Toshiba Semiconductor and Storage 2SK2883(TE24L,Q)
MPN2SK2883(TE24L,Q)
Obsolete
$1.8200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 3A (Ta) |
| Power dissipation | 75W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 1mA |
| Rds on (Max) @ id, vgs | 3.6Ohm @ 1.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 25 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 750 pF @ 25 V |