2SC5886A~1T6L1~6NQ~2
Toshiba Semiconductor and Storage 2SC5886A(T6L1,NQ)
MPN2SC5886A(T6L1,NQ)
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Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| FET type | NPN |
| Voltage - collector emitter breakdown | 50 V |
| Current - collector (Ic) | 5 A |
| Current - collector cutoff | 100nA (ICBO) |
| DC current gain (hFE) (Min) @ ic, vce | 400 @ 500mA, 2V |
| Power - max | 1 W |
| Operating temperature | 150°C(TJ) |
| Package | Tape & Reel (TR) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vce saturation (Max) @ ib, ic | 220mV @ 32mA, 1.6A |