Toshiba Semiconductor and Storage 2SC5459(TOJS,Q,M)
MPN2SC5459(TOJS,Q,M)
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Through Hole |
| FET type | NPN |
| Voltage - collector emitter breakdown | 400 V |
| Current - collector (Ic) | 3 A |
| Current - collector cutoff | 100µA (ICBO) |
| DC current gain (hFE) (Min) @ ic, vce | 20 @ 300mA, 5V |
| Power - max | 2 W |
| Operating temperature | 150°C (TJ) |
| Package | Bulk |
| Case | TO-220-3 Full Pack |
| Vce saturation (Max) @ ib, ic | 1V @ 150mA, 1.2A |