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Toshiba Semiconductor and Storage 2SC4213BTE85LF — Discrete Semiconductors

Toshiba Semiconductor and Storage 2SC4213BTE85LF

MPN2SC4213BTE85LF
Active

TRANS NPN 20V 0.3A USM

$0.4600Ref. price · indicative, final on quote
PackagingSC-70, SOT-323
RoHSRoHS Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SC4213BTE85LF specifications
ParameterValue
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown20 V
Current - collector (Ic)300 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce350 @ 4mA, 2V
Power - max100 mW
Frequency - transition30MHz
Operating temperature125°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-70, SOT-323
Vce saturation (Max) @ ib, ic100mV @ 3mA, 30A