Toshiba Semiconductor and Storage 2SC2235-O,F(J
MPN2SC2235-O,F(J
Obsolete
$0.4800Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Through Hole |
| FET type | NPN |
| Voltage - collector emitter breakdown | 120 V |
| Current - collector (Ic) | 800 mA |
| Current - collector cutoff | 100nA (ICBO) |
| DC current gain (hFE) (Min) @ ic, vce | 80 @ 100mA, 5V |
| Power - max | 900 mW |
| Frequency | 120MHz |
| Operating temperature | 150°C (TJ) |
| Package | Bulk |
| Case | TO-226-3, TO-92-3 Long Body |
| Vce saturation (Max) @ ib, ic | 1V @ 50mA, 500mA |