Toshiba Semiconductor and Storage 2SC2229-Y(MIT,F,M)
MPN2SC2229-Y(MIT,F,M)
Obsolete
$0.5900Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Through Hole |
| FET type | NPN |
| Voltage - collector emitter breakdown | 150 V |
| Current - collector (Ic) | 50 mA |
| Current - collector cutoff | 100nA (ICBO) |
| DC current gain (hFE) (Min) @ ic, vce | 70 @ 10mA, 5V |
| Power - max | 800 mW |
| Frequency | 120MHz |
| Operating temperature | 150°C (TJ) |
| Package | Bulk |
| Case | TO-226-3, TO-92-3 Long Body |
| Vce saturation (Max) @ ib, ic | 500mV @ 1mA, 10mA |