STMicroelectronics STFV Series

2 variants · STMicroelectronicsAll Discrete Semiconductors →

About the STMicroelectronics STFV Series

The STMicroelectronics STFV Series series groups 2 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common case of TO-220-3 Full Pack, Isolated Tab, drain to source voltage of 1500 V and drive voltage (Max rds on, min rds on) of 10V. Variants differ by current - continuous drain (Id) @ 25°C, gate charge (Qg) (Max) @ vgs and input capacitance (Ciss) (Max) @ vds, so you can match the exact current - continuous drain (Id) @ 25°C your application requires using the selection guide below. Listed STMicroelectronics STFV Series part numbers are obsolete or end-of-life — we specialise in sourcing discontinued and hard-to-find STMicroelectronics STFV Series components.

Select a variant by

Current - continuous drain (Id) @ 25°C: 2.5A (Tc) · 4A (Tc)
Gate charge (Qg) (Max) @ vgs: 29.3 nC @ 10 V · 50 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds: 939 pF @ 25 V · 1300 pF @ 25 V
Power dissipation: 30W (Tc) · 40W (Tc)
Rds on (Max) @ id, vgs: 7Ohm @ 2A, 10V · 9Ohm @ 1.3A, 10V

Shared specifications

Case: TO-220-3 Full Pack, Isolated Tab
Drain to source voltage: 1500 V
Drive voltage (Max rds on, min rds on): 10V
FET feature: -
FET type: N-Channel
Mounting: Through Hole
Operating temperature: 150°C(TJ)
Package: Tube
Technology: MOSFET (Metal Oxide)
Vgs: ±30V
Vgs(th) (Max) @ id: 5V @ 250µA

Variant comparison

Parameter	STFV3N150	STFV4N150
Current - continuous drain (Id) @ 25°C	2.5A (Tc)	4A (Tc)
Gate charge (Qg) (Max) @ vgs	29.3 nC @ 10 V	50 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds	939 pF @ 25 V	1300 pF @ 25 V
Power dissipation	30W (Tc)	40W (Tc)
Rds on (Max) @ id, vgs	9Ohm @ 1.3A, 10V	7Ohm @ 2A, 10V

Request a quote on any STMicroelectronics STFV Series part number and we confirm price, availability and lead time per line — including end-of-life and allocation-constrained variants.