600 V N-channel in a TO-220 — the power-switch baseline
The STP33N60M2 is an STMicroelectronics N-channel power MOSFET from the MDmesh™ II Plus series, built on a planar stripe technology that balances on-resistance and switching losses. The gate charge of 45.5 nC at 10 V keeps the driver power manageable for switching frequencies up to the 100 kHz range.
This is the conduction loss anchor: at 26 A the I²R loss would be 84.5 W if the on-resistance held flat, but the actual junction temperature rise will increase Rds(on) by roughly 50% at 125°C, so budget the thermal resistance of the heatsink accordingly. The 45.5 nC total gate charge at Vgs=10 V translates to a gate-drive power of Pgate = Qg × Vgs × fsw. At 100 kHz switching, that is 45.5 nC × 10 V × 100 kHz = 45.5 mW — well within a standard gate-driver IC's capability. The input capacitance Ciss of 1781 pF at Vds=100 V sets the Miller plateau duration and the driver's peak current requirement for a given rise time.