800 V, 17 A N-Channel MOSFET — MDmesh™ series
The STP18NM80 is an N-Channel power MOSFET from STMicroelectronics' MDmesh™ series, rated for 800 V drain-to-source voltage (Vdss) and 17 A continuous drain current at 25°C case temperature. On-resistance is specified at 295 mOhm maximum with 8.5 A drain current and 10 V gate drive — this is the conduction loss figure for a hard-switched power stage at the rated current. The 70 nC typical gate charge at 10 V sets the switching loss ceiling; paired with 2070 pF input capacitance at 50 V Vds, the gate drive circuit should be sized to deliver the peak current needed for the target transition time.
Package and thermal limits for the BOM
Housed in a standard TO-220-3 through-hole package (supplier device package TO-220), the STP18NM80 mounts into a PCB with a single screw or clip — the tab is the drain connection and carries the thermal path to the heatsink. Maximum power dissipation is 190 W at case temperature, with the junction temperature limit at 150°C — the thermal resistance from junction to case drives the heatsink requirement in a continuous-duty application. Gate threshold voltage is 5 V maximum at 250 µA drain current, and the recommended drive voltage for minimum on-resistance is 10 V, with a maximum gate-source rating of ±30 V.
Lifecycle and compliance status
RoHS compliance is confirmed at the ROHS3 level, meeting the latest EU restriction of hazardous substances directive for lead-free assembly.