Skip to main content
STMicroelectronics STP11N65M2 — Discrete Semiconductors

STMicroelectronics STP11N65M2

MPNSTP11N65M2
Active

MOSFET N-CH 650V 7A TO220

$1.8200Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

STP11N65M2 Technical Specifications
ParameterValue
SeriesMDmesh™ II Plus
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7A (Tc)
Power dissipation85W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs670mOhm @ 3.5A, 10V
Gate charge (Qg) (Max) @ vgs12.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds410 pF @ 100 V