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STMicroelectronics STP11N65M2 — Discrete Semiconductors

STP11N65M2 N-Channel MOSFET, 650 V, 7 A, TO-220

MPNSTP11N65M2
Active

STMicroelectronics STP11N65M2, MDmesh™ II Plus N-channel MOSFET, 650 V Vdss, 7 A Id, 670 mOhm Rds(on) at 10 V, 12.5 nC Qg, TO-220-3 through-hole, -55°C to 150°C.

$1.8200Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesMDmesh™ II Plus
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP11N65M2 specifications
ParameterValue
SeriesMDmesh™ II Plus
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7A (Tc)
Power dissipation85W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs670mOhm @ 3.5A, 10V
Gate charge (Qg) (Max) @ vgs12.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds410 pF @ 100 V

Product details

650 V, 7 A N-channel — MDmesh II Plus

The STP11N65M2: It comes in a TO-220-3 through-hole package, suited for offline switched-mode power supplies, lighting ballasts, and industrial power converters where the 650 V breakdown margin handles rectified mains with derating.

At 7 A the conduction loss hits about 33 W at 25°C junction — the 85 W package power dissipation limit provides headroom, but the TO-220's thermal resistance to case (RthJC) must be managed with a heatsink. The 670 mOhm figure is the worst-case ceiling; typical Rds(on) is lower, but the design should close thermal analysis on the max value.

12.5 nC gate charge — switching efficiency

Total gate charge at 10 V is 12.5 nC, and input capacitance is 410 pF at 100 V Vds. The low Qg keeps gate-drive energy low.

Frequently asked questions

What is the Rds(on) of STP11N65M2?

This is the ceiling value for worst-case thermal analysis.