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STMicroelectronics STF9HN65M2 — Discrete Semiconductors

STMicroelectronics STF9HN65M2

MPNSTF9HN65M2
Obsolete
$1.2400Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

STF9HN65M2 Technical Specifications
ParameterValue
SeriesMDmesh™ M2
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5.5A (Tc)
Power dissipation20W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs820mOhm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs11.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds325 pF @ 100 V