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Renesas Electronics R1WV6416RBG-7SI#B0 — Memory (DRAM / SRAM / Flash / EEPROM)
Renesas Electronics

Renesas R1WV6416RBG-7SI#B0 64Mbit SRAM, 70 ns access

MPNR1WV6416RBG-7SI#B0
End of Life

Renesas R1WV6416RBG-7SI#B0, 64Mbit volatile parallel SRAM, 70 ns access, 2.7V supply, configurable 4M x 16 / 8M x 8, surface-mount 48-TFBGA, -40°C to 85°C.

$110.71Ref. price · indicative, final on quote
R1WV6416RBG-7SI#B0 datasheet
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Specifications

R1WV6416RBG-7SI#B0 Technical Specifications
ParameterValue
Interface_typeParallel
Mounting_typeSurface Mount
Operating temperature high-40°C to 85°C(TA)
Frame_size64Mbit
Access time70 ns
Memory_typeVolatile
Package_typeBulk
Memory formatSRAM
Supply_voltage_v2.7
Memory organization4M x 16, 8M x 8
Write cycle time - word, page70ns

Product details

64 Mbit parallel SRAM — what it is and where it fits

The R1WV6416RBG-7SI#B0: 64 Mbit volatile SRAM organized as 4M x 16 or 8M x 8, accessed over a parallel bus with a 70 ns access time. It operates from a 2.7 V supply and is rated for -40°C to 85°C.

Industrial temperature and supply flexibility

-40°C to 85°C operating range. 2.7 V supply voltage.

Configurable memory organization

The memory can be configured as 4M words of 16 bits or 8M words of 8 bits, selected via the byte-control pins. This gives the designer a single BOM line that serves both 16-bit and 8-bit bus architectures — useful when the same PCB is populated for different end-product variants.

EOL status — sourcing reality

Lifecycle stage is marked as EOL. Renesas has discontinued this part; no further production runs are planned.

Frequently asked questions

What is the closest functional second-source for R1WV6416RBG-7SI#B0?

The peer R1WV6416RBG-7SR#B0 is a functionally identical part — same 64 Mbit SRAM, same 70 ns access, same 2.7 V supply, same 48-TFBGA package. The difference is in the suffix, which may indicate a different packing or revision. Drop-in compatibility should be verified against the specific board layout and timing requirements.