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Renesas Electronics NP179N055TUK-E1-AY — Memory (DRAM / SRAM / Flash / EEPROM)

NP179N055TUK-E1-AY Renesas N-Channel MOSFET, 180A, 55V

MPNNP179N055TUK-E1-AY
End of Life

Renesas Electronics NP179N055TUK--AY, Automotive N-Channel MOSFET, 180 A continuous drain, 55 V Vdss, 1.75 mOhm Rds(on), TO-263-7 surface-mount package, AEC-Q101 qualified, Tray.

$7.95Ref. price · indicative, final on quote
PackagingTO-263-7
StockIn Stock (27)
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

NP179N055TUK-E1-AY Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C180A (Tc)
Power dissipation1.8W (Ta), 288W (Tc)
Operating temperature175°C
GradeAutomotive
PackageTray
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.75mOhm @ 90A, 10V
Gate charge (Qg) (Max) @ vgs240 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds13950 pF @ 25 V

Product details

180 A continuous drain, 55 V Vdss — power-train and load-switch fit

The NP179N055TUK-E1-AY: The NP179N055TUK--AY is a 55 V, 180 A N-channel MOSFET from Renesas, packaged in a TO-263-7 (D²PAK-7) for surface-mount assembly. Its 1.75 mOhm max Rds(on) at 90 A and 10 V gate drive sets a floor for conduction losses in high-current switching — in a 100 A motor-drive phase leg, that resistance dissipates roughly 17.5 W at full load, within the 288 W Tc power-dissipation ceiling.

AEC-Q101 automotive line — under-hood and chassis-domain deployment

Qualified per AEC-Q101, the NP179N055TUK--AY carries the temperature and reliability screening required for engine-bay, transmission, and chassis electronics. The 175 °C maximum operating temperature gives margin above the 125 °C ambient of a typical under-hood ECU — the die can handle the self-heating from the 1.8 W Ta dissipation without derating the load current. The 55 V Vdss rating sits comfortably above the 12 V and 24 V automotive bus voltages, covering load-dump transients that can spike to 40 V on a 12 V system. The ±20 V max gate-source rating means a standard 10 V gate drive from a pre-regulator or gate-driver IC stays well within the SOA.

Gate charge and capacitance — driver budget for fast switching

240 nC total gate charge at 10 V — this is the charge the driver must source to turn the FET fully on. For a 100 kHz switching frequency, the average gate-drive current needed is Qg × fsw = 24 mA, plus the shoot-through current during the Miller plateau. The 13950 pF input capacitance at 25 V Vds means the driver sees a capacitive load that slows the rise time; a driver with at least 2 A peak sink/source current keeps the switching edges under 100 ns.

TO-263-7 package — thermal and layout checklist

The TO-263-7 (D²PAK-7) has an exposed die-attach paddle on the bottom — the thermal pad must be soldered to a copper island on the PCB, with vias down to an inner-layer or backside plane to pull heat into the board. The 288 W Tc dissipation assumes the case temperature is held at 25 °C; in a real 85 °C ambient, the effective continuous current derates per the RthJC curve in the product drawing.

Active lifecycle — no NRND or EOL risk

Renesas lists the NP179N055TUK--AY as Active. ROHS3 compliant — no exemptions expiring. The part is suitable for both new-design insertion and existing BOM sustainment without a migration timeline.

Frequently asked questions

What is the Rds(on) of NP179N055TUK--AY at 10 V gate drive?

1.75 mOhm max at 90 A drain current and 10 V Vgs. This is the conduction loss floor for high-current switching — at 180 A the loss doubles to roughly 3.5 mOhm due to the Rds(on) positive temperature coefficient.

What automotive qualification does NP179N055TUK--AY carry?

AEC-Q101 — the automotive discrete semiconductor qualification covering temperature grade, reliability stress, and PPAP documentation. Combined with the 175 °C operating temperature, it is suited for under-hood and chassis-domain electronics.