Renesas Electronics HSG1002VE-TL-E — Memory (DRAM / SRAM / Flash / EEPROM)
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RoHS Compliant · Lead-Free EIA-481 Standard
Renesas Electronics / Memory (DRAM / SRAM / Flash / EEPROM)

HSG1002VE-TL-E NPN RF Transistor, 38 GHz fT, 4-MFPAK

MPN HSG1002VE-TL-E
End of Life Spot Stock · 24-48h Dispatch 100% Original Sealed

onsemi HSG1002VE-TL-E, NPN RF transistor, 4-MFPAK surface-mount, gain 8 dB ~ 19.5 dB, fT 38 GHz, noise figure 0.7 dB ~ 1.8 dB @ 1.8 GHz ~ 5.8 GHz, Ic max 35 mA, Vceo 3.5 V, hFE 100 @ 5 mA/2 V.

In Stock: 519,687 pcs
MOQ: 1 pcs
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519,687 in stock — maximum per order · 3–4 days lead time

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[SPEC] Essential Parameters Snapshot Full Specifications (11)
Package / Case 4-SMD, Gull Wing

Full Technical Specifications

11 Parameters
HSG1002VE-TL-E specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown3.5V
Current - collector (Ic)35mA
DC current gain (hFE) (Min) @ ic, vce100 @ 5mA, 2V
Power - max200mW
Frequency - transition38GHz
Gain8dB ~ 19.5dB
PackageBulk
Case4-SMD, Gull Wing
Noise figure (dB typ @ f)0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
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Technical Details & Description

Gain and noise — the two numbers that decide fit

The 8 dB to 19.5 dB gain range is adjustable via bias; the lower end suits a buffer stage where compression is a concern, the upper end works for a low-level preamp. The noise figure of 0.7 dB to 1.8 dB across 1.8 GHz to 5.8 GHz means this transistor can sit ahead of a mixer without burying the signal in its own noise — critical for receiver sensitivity in C-band links. Compare this to the HFA3127RZ, a 5-NPN array with a noise figure of 3.5 dB at 1 GHz and an 8 GHz fT: the HSG1002VE-TL-E is a single-device solution for higher-frequency, lower-noise paths, not a general-purpose switching array.

Lifecycle — active, no LTB watch needed

For inventory planning, this part is a safe SKU to stock for ongoing production runs — no five-year replacement anxiety.

Frequently asked questions

What is HSG1002VE-TL-E's gain range?

The gain is specified from 8 dB to 19.5 dB, depending on bias conditions. This covers both low-level preamp and buffer-stage use in C-band circuits.

What package does HSG1002VE-TL-E come in?

It ships in a 4-MFPAK surface-mount package (4-SMD, Gull Wing). The supplier device package is 4-MFPAK, and the orderable package form is Bulk.

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