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Renesas Electronics HN58V66ATI10E — Memory (DRAM / SRAM / Flash / EEPROM)
Renesas Electronics

Renesas HN58V66ATI10E Parallel 64Kbit EEPROM, Active

MPNHN58V66ATI10E
Active

Renesas HN58V66ATI10E, parallel 64Kbit EEPROM, series *, Bulk package, active lifecycle stage.

$11.06Ref. price · indicative, final on quote
HN58V66ATI10E datasheet
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

HN58V66ATI10E Technical Specifications
ParameterValue
Series*
Package_typeBulk
Product_statusActive

Product details

Parallel 64Kbit EEPROM — what this part is

The Renesas HN58V66ATI10E is a parallel-interface 64Kbit EEPROM, a non-volatile memory for storing configuration data, calibration constants, or firmware parameters that need field updates. The parallel bus gives it a straightforward read/write cycle with no serial protocol overhead — useful in legacy 8-bit microcontroller designs or FPGA glue-logic where a byte-wide memory map is preferred over SPI or I2C.

That suits hand-assembly, rework stations, or low-volume prototyping where a pick-and-place feeder setup is not justified.

Frequently asked questions

What are the alternatives to HN58V66ATI10E?

The evidence lists M5M5W816WG-70HI#BT and M5M5V5636GP-16I#B0 as peer entries, but these are from a different manufacturer and their functional equivalence — pin compatibility, timing, and operating voltage — must be verified against the Renesas datasheet before substituting into a BOM.