64 Mbit SPI NOR Flash in 8-SOIC — the BOM-fit tier
The write cycle timing is 8 µs for a word and 5 ms for a full page, which matters when estimating firmware update durations or logging sensor data at high cadence.

Renesas AT45DB641E-SHN-B, 64 Mbit SPI NOR Flash, 85 MHz, 8-SOIC (0.209", 5.30 mm Width), 1.7 V to 3.6 V supply, -40°C to 85°C, Tube.
| Parameter | Value |
|---|---|
| Memory type | Non-Volatile |
| Mounting | Surface Mount |
| Voltage | 1.7V ~ 3.6V |
| Frequency | 85 MHz |
| Memory interface | SPI |
| Operating temperature | -40°C ~ 85°C (TC) |
| Package | Tube |
| Technology | FLASH |
| Memory size | 64Mbit |
| Memory format | FLASH |
| Case | 8-SOIC (0.209\", 5.30mm Width) |
| Memory organization | 264 Bytes x 32K pages |
| Write cycle time - word, page | 8µs, 5ms |
The write cycle timing is 8 µs for a word and 5 ms for a full page, which matters when estimating firmware update durations or logging sensor data at high cadence.
No, the AT45DB641E-SHN-B is Active in production with no end-of-life notice. It is safe to specify for new designs.
The AT45DB641E-MHN-T and AT45DB641E-MHN-Y are functional equivalents with the same 64 Mbit density, 85 MHz SPI interface, and 8-SOIC package. The difference is packaging format: the -SHN-B ships in Tube, while the -MHN-T is Tape & Reel and the -MHN-Y is Tray. All share the same die and electrical specifications.