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Renesas Electronics 71V416L12YG8 — Memory (DRAM / SRAM / Flash / EEPROM)

71V416L12YG8 4Mbit Async SRAM, 12 ns, 3.3 V, 44-SOJ

MPN71V416L12YG8
End of Life

Renesas 71V416L12YG8, 4Mbit asynchronous SRAM, 256K x 16, 12 ns access time, 3V–3.6V supply, 0°C to 70°C, 44-SOJ package.

$4.14Ref. price · indicative, final on quote
Renesas Electronics 71V416L12YG8 datasheet (PDF)
Packaging44-BSOJ (0.400", 10.16mm Width)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

71V416L12YG8 specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage3V ~ 3.6V
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageBulk
TechnologySRAM - Asynchronous
Access time12 ns
Memory size4Mbit
Memory formatSRAM
Case44-BSOJ (0.400\", 10.16mm Width)
Memory organization256K x 16
Write cycle time - word, page12ns

Product details

The Renesas 71V416L12YG8 is a 4 Mbit asynchronous SRAM organized as 256K x 16, with a 12 ns access time and a parallel interface.

Package and temperature — fits commercial indoor boards

Housed in a 44-SOJ package (10.16 mm width), this is a surface-mount part. The SOJ footprint is common on older telecom and networking boards; verify your board's pad layout matches before ordering.

Lifecycle and sourcing — still active, no LTB worry

Write cycle and supply — the fine print

The write cycle time matches the access time at 12 ns — so read and write cycles are symmetric.

Frequently asked questions

What is the access time of the 71V416L12YG8?

12 ns access time for both read and write cycles.