Skip to main content
Renesas Electronics 71V3559S75BQ — Memory (DRAM / SRAM / Flash / EEPROM)

71V3559S75BQ SRAM, 4.5Mbit, 7.5 ns, 165-CABGA

MPN71V3559S75BQ
End of Life

Integrated Device Technology 71V3559S75BQ synchronous ZBT SRAM, 4.5Mbit, 256K x 18, 7.5 ns access, 3.135V-3.465V supply, 165-CABGA (13x15 mm), 0°C to 70°C.

$5.46Ref. price · indicative, final on quote
Packaging165-TBGA
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

71V3559S75BQ specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage3.135V ~ 3.465V
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageBulk
TechnologySRAM - Synchronous, SDR (ZBT)
Access time7.5 ns
Memory size4.5Mbit
Memory formatSRAM
Case165-TBGA
Memory organization256K x 18

Product details

256K x 18 synchronous ZBT SRAM — 7.5 ns access at 3.3 V

The 71V3559S75BQ is a 4.5 Mbit synchronous SRAM organized 256K x 18, using a Zero Bus Turnaround (ZBT) architecture that eliminates dead cycles between read and write operations on a common data bus.

165-ball CABGA — 13x15 mm footprint

The 165-ball CABGA (13x15 mm) package is a fine-pitch BGA requiring controlled impedance PCB routing and careful decoupling at the supply balls — the 3.3 V core draws transient current during simultaneous read-write transitions that the bypass caps must supply locally.

Frequently asked questions

How can I order the 71V3559S75BQ and check availability?

The 71V3559S75BQ is an active SRAM — submit an RFQ through this listing with your target quantity and target price.

What is the memory organization and interface of the 71V3559S75BQ?

It is organized as 256K words by 18 bits (4.5 Mbit total) with a parallel interface. The ZBT (Zero Bus Turnaround) architecture allows back-to-back reads and writes without wait states on a shared data bus.