Skip to main content
Renesas Electronics 71V256SA12PZI — Memory (DRAM / SRAM / Flash / EEPROM)

71V256SA12PZI Renesas SRAM 256Kbit 12ns 28-TSOP

MPN71V256SA12PZI
End of Life

Renesas Electronics 71V256SA12PZI asynchronous SRAM, 256Kbit (32K x 8), 12 ns access time, 3V-3.6V supply, -40°C to +85°C, 28-TSOP surface mount.

$1.07Ref. price · indicative, final on quote
Packaging28-TSSOP (0.465", 11.80mm Width)
RoHSRoHS non-compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

71V256SA12PZI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage3V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageBulk
TechnologySRAM - Asynchronous
Access time12 ns
Memory size256Kbit
Memory formatSRAM
Case28-TSSOP (0.465\", 11.80mm Width)
Memory organization32K x 8
Write cycle time - word, page12ns

Product details

12 ns asynchronous SRAM for cache and buffer duty

The 71V256SA12PZI is a 256Kbit asynchronous SRAM from Renesas, organized as 32K x 8 bits with a parallel memory interface. The 12 ns access time and matching 12 ns write cycle time set the bus timing margin — in a system with a 33 MHz bus clock (30 ns period), the 12 ns access leaves 18 ns for address decode, data setup, and board trace delay before the next clock edge. This margin shrinks at higher clock rates; at 50 MHz (20 ns period) the 8 ns window is tight enough that the board layout must minimize stub length and capacitance on the data lines.

28-TSOP footprint and supply rail

Housed in a 28-TSSOP package (0.465" body width, 11.80 mm) with a surface-mount 28-TSOP supplier package designation.

Frequently asked questions

What is the memory organization and access time of the 71V256SA12PZI?

The 71V256SA12PZI is organized as 32K x 8 bits (256Kbit total) with a parallel interface.