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Renesas Electronics 71V124SA10TYG8 — Memory (DRAM / SRAM / Flash / EEPROM)
Renesas Electronics

Renesas 71V124SA10TYG8 1Mbit Async SRAM, 10 ns, 32-SOJ

MPN71V124SA10TYG8
End of Life

Renesas Electronics 71V124SA10TYG8 asynchronous SRAM, 1 Mbit (128K x 8), 10 ns access time, parallel interface, 3.15 V to 3.6 V supply, 32-SOJ surface-mount package, bulk.

$1.6Ref. price · indicative, final on quote
Packaging32-BSOJ (0.300", 7.62mm Width)
StockIn Stock (22)
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

71V124SA10TYG8 Technical Specifications
ParameterValue
Memory typeVolatile
Mounting typeSurface Mount
Voltage3.15V ~ 3.6V
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageBulk
TechnologySRAM - Asynchronous
Access time10 ns
Memory size1Mbit
Memory formatSRAM
Case32-BSOJ (0.300\", 7.62mm Width)
Memory organization128K x 8
Write cycle time - word, page10ns

Product details

1 Mbit asynchronous SRAM in 32-SOJ — board-fit and speed grade

The Renesas 71V124SA10TYG8 is a 1 Mbit asynchronous SRAM organized as 128K x 8 bits, with a 10 ns access time that places it in the fast-page category for cache tag RAM, FIFO buffers, or microcontroller data memory where deterministic read/write latency matters. Housed in a 32-pin SOJ (Small Outline J-Lead) package (32-BSOJ, 0.300" body width, 7.62 mm), the part mounts on the board surface with a J-bend footprint — the same pad layout used by many 32-pin SOJ SRAMs, which simplifies PCB reuse across density upgrades.

Supply and temperature — 3.3 V logic, commercial range

The 10 ns write cycle time (word, page mode) matches the read access speed, keeping read-modify-write operations symmetric.