Renesas Electronics America Inc 2SK1339-E
MPN2SK1339-E
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Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 900 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 3A (Ta) |
| Power dissipation | 80W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Rds on (Max) @ id, vgs | 7Ohm @ 1.5A, 10V |
| Input capacitance (Ciss) (Max) @ vds | 425 pF @ 10 V |