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Renesas Electronics America Inc 2SK1317-E — Discrete Semiconductors

Renesas Electronics America Inc 2SK1317-E

MPN2SK1317-E
Active

MOSFET N-CH 1500V 2.5A TO3P

$6.5900Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SK1317-E specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1500 V
Drive voltage (Max rds on, min rds on)15V
Current - continuous drain (Id) @ 25°C2.5A (Ta)
Power dissipation100W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Rds on (Max) @ id, vgs12Ohm @ 2A, 15V
Input capacitance (Ciss) (Max) @ vds990 pF @ 10 V