ICBOMS

Qorvo — Discrete Semiconductors

Turnkey BOM procurement and spot-buy shortage sourcing for Qorvo Discrete Semiconductors — 3 part numbers with specifications and datasheets. Filter by key specs

Current - Continuous Drain (Id) @ 25°C
53A (Tc) · 47A (Tc) · 106A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
1430 pF @ 800 V · 1400 pF @ 400 V · 3340 pF @ 400 V
Power Dissipation (Max)
385W (Tc) · 242W (Tc) · 375W (Tc)
Rds On (Max) @ Id, Vgs
29mOhm @ 40A, 12V · 41mOhm @ 30A, 12V · 11.5mOhm @ 70A, 12V
Drain to Source Voltage (Vdss)
1200 V · 750 V
Gate Charge (Qg) (Max) @ Vgs
37.8 nC @ 15 V · 75 nC @ 15 V
Technology
SiCFET (Cascode SiCJFET) · SiCFET (Silicon Carbide)
Vgs(th) (Max) @ Id
6V @ 10mA · 5.5V @ 10mA

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