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NXP Semiconductors BFU730F,115 — Memory (DRAM / SRAM / Flash / EEPROM)
NXP Semiconductors

NXP BFU730F,115 NPN RF Transistor, 55 GHz, SOT-343F

MPNBFU730F,115
End of Life

NXP BFU730F,115 NPN RF transistor, 2.8 V Vceo, 55 GHz fT, 30 mA Ic, SOT-343F package, 150°C junction temperature.

$0.66Ref. price · indicative, final on quote
BFU730F,115 datasheet
PackagingSOT-343F
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BFU730F,115 Technical Specifications
ParameterValue
Mounting typeSurface Mount
Transistor typeNPN
Voltage - collector emitter breakdown2.8V
Current - collector (Ic)30mA
DC current gain (hFE) (Min) @ ic, vce205 @ 2mA, 2V
Power - max197mW
Frequency55GHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-343F
Noise figure (dB typ @ f)0.8dB ~ 1.3dB @ 5.8GHz ~ 12GHz

Product details

DC gain and bias point

Minimum DC current gain (hFE) is 205 at a collector current of 2 mA and collector-emitter voltage of 2 V. Collector-emitter breakdown is 2.8 V.

Lifecycle and compliance

Product status is Active. RoHS3 compliant. No NRND or EOL notice.

Frequently asked questions

What is the operating frequency and noise figure of BFU730F,115?

The transition frequency is 55 GHz. Typical noise figure is 0.8 dB at 5.8 GHz and 1.3 dB at 12 GHz.

Is BFU730F,115 RoHS compliant?

Yes, it is RoHS3 compliant.