
BSH103BKR
Nexperia USA Inc.
3 variants · Nexperia USA Inc.
The Nexperia USA Inc. BSH1 Discrete Semiconductors Series series groups 3 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. The listed variants share a common case of TO-236-3, SC-59, SOT-23-3, drain to source voltage of 30 V and FET feature of -. Variants differ by current - continuous drain (Id) @ 25°C, drive voltage (Max rds on, min rds on) and gate charge (Qg) (Max) @ vgs, so you can match the exact current - continuous drain (Id) @ 25°C your application requires using the selection guide below. The range mixes active and legacy part numbers, so you can source both current Nexperia USA Inc. BSH1 Discrete Semiconductors Series variants and discontinued ones from a single page.
| Parameter | BSH103,235 | BSH103BKR |
|---|---|---|
| Current - continuous drain (Id) @ 25°C | 850mA (Ta) | 1A (Ta) |
| Drive voltage (Max rds on, min rds on) | 2.5V | 1.8V, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 2.1 nC @ 4.5 V | 1.2 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 83 pF @ 24 V | 79.3 pF @ 15 V |
| Power dissipation | 540mW (Ta) | 330mW (Ta), 2.1W (Tc) |
| Rds on (Max) @ id, vgs | 400mOhm @ 500mA, 4.5V | 270mOhm @ 1A, 4.5V |
| Vgs | ±8V | ±12V |
Request a quote on any Nexperia USA Inc. BSH1 Discrete Semiconductors Series part number and we confirm price, availability and lead time per line — including end-of-life and allocation-constrained variants.

Nexperia USA Inc.

Nexperia USA Inc.