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Nexperia USA Inc. BSH103,235 — Discrete Semiconductors

Nexperia USA Inc. BSH103,235

MPNBSH103,235
NRND
$0.3900Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSH103,235 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)2.5V
Current - continuous drain (Id) @ 25°C850mA (Ta)
Power dissipation540mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id400mV @ 1mA (Min)
Rds on (Max) @ id, vgs400mOhm @ 500mA, 4.5V
Gate charge (Qg) (Max) @ vgs2.1 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds83 pF @ 24 V