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Nexperia USA Inc. PMV30XPAR — Discrete Semiconductors

Nexperia USA Inc. PMV30XPAR

MPNPMV30XPAR
Active
$0.4300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PMV30XPAR specifications
ParameterValue
SeriesAutomotive, AEC-Q101, TrenchMOS™
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 8V
Current - continuous drain (Id) @ 25°C4.9A (Ta)
Power dissipation610mW (Ta), 8.3W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.3V @ 250µA
Rds on (Max) @ id, vgs33mOhm @ 4.9A, 8V
Gate charge (Qg) (Max) @ vgs16 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1039 pF @ 10 V