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Nexperia USA Inc. PMV30UN2VL — Discrete Semiconductors

Nexperia USA Inc. PMV30UN2VL

MPNPMV30UN2VL
Active
$0.0905Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PMV30UN2VL specifications
ParameterValue
SeriesTrenchMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.2V, 4.5V
Current - continuous drain (Id) @ 25°C5.4A (Ta)
Power dissipation490mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id900mV @ 250µA
Rds on (Max) @ id, vgs32mOhm @ 4.2A, 4.5V
Gate charge (Qg) (Max) @ vgs11 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds655 pF @ 10 V