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Nexperia USA Inc. PMV130ENEA/DG/B2R — Discrete Semiconductors

Nexperia USA Inc. PMV130ENEA/DG/B2R

MPNPMV130ENEA/DG/B2R
Obsolete
$0.4300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PMV130ENEA/DG/B2R specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C2.1A (Ta)
Power dissipation5W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs120mOhm @ 1.5A, 10V
Gate charge (Qg) (Max) @ vgs3.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds170 pF @ 20 V