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Nexperia USA Inc. PMEG3010AESBYL — Discrete Semiconductors

PMEG3010AESBYL Schottky Diode 30V 1A DSN1006-2 — Nexperia | I...

MPNPMEG3010AESBYL
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DIODE SCHOTTKY 30V 1A DSN1006-2

$0.3900Ref. price · indicative, final on quote
Packaging2-XDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PMEG3010AESBYL specifications
ParameterValue
Diode typeSchottky
MountingSurface Mount
Voltage - DC reverse (Vr)30 V
Voltage - forward (Vf) (Max) @ if480 mV @ 1 A
Current - reverse leakage @ vr255 µA @ 20 V
Current - average rectified1A
Operating temperature - junction150°C(Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
Case2-XDFN
Capacitance @ vr,86pF @ 1V, 1MHz
Reverse recovery time3.5 ns