Skip to main content
Nexperia USA Inc. PMEG120G30ELPJ — Discrete Semiconductors

Nexperia USA Inc. PMEG120G30ELPJ

MPNPMEG120G30ELPJ
Obsolete
$0.4600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PMEG120G30ELPJ specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Diode typeSiGe (Silicon Germanium)
MountingSurface Mount
Voltage - DC reverse (Vr)120 V
Voltage - forward (Vf) (Max) @ if840 mV @ 3 A
Current - reverse leakage @ vr30 nA @ 120 V
Current - average rectified3A
Operating temperature - junction175°C(Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOD-128
Capacitance @ vr,103pF @ 1V, 1MHz
Reverse recovery time11 ns