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Nexperia USA Inc. NHUMH11X — Memory (DRAM / SRAM / Flash / EEPROM)

Nexperia USA Inc. NHUMH11X

MPNNHUMH11X
Active

TRANS PREBIAS 2NPN 80V 6TSSOP

$0.4Ref. price · indicative, final on quote
Packaging6-TSSOP, SC-88, SOT-363
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NHUMH11X specifications
ParameterValue
SeriesAutomotive, AEC-Q101
MountingSurface Mount
FET type2 NPN - Pre-Biased (Dual)
Voltage - collector emitter breakdown80V
Current - collector (Ic)100mA
Current - collector cutoff100nA
DC current gain (hFE) (Min) @ ic, vce50 @ 10mA, 5V
Power - max350mW
Frequency - transition170MHz
PackageTape & Reel (TR); Cut Tape (CT)
Case6-TSSOP, SC-88, SOT-363
Resistor - base (R1)10kOhms
Resistor - emitter base (R2)10kOhms
Vce saturation (Max) @ ib, ic100mV @ 500µA, 10mA