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Nexperia USA Inc. BCM847QASZ — Memory (DRAM / SRAM / Flash / EEPROM)

Nexperia USA Inc. BCM847QASZ

MPNBCM847QASZ
Active

TRANS 2NPN 45V 0.1A DFN1010B-6

$0.44Ref. price · indicative, final on quote
Packaging6-XFDFN Exposed Pad
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BCM847QASZ specifications
ParameterValue
SeriesAutomotive, AEC-Q101
MountingSurface Mount
FET typeNPN, PNP
Voltage - collector emitter breakdown45V
Current - collector (Ic)100mA
Current - collector cutoff15nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce200 @ 2mA, 5V
Power - max350mW
Frequency100MHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case6-XFDFN Exposed Pad
Vce saturation (Max) @ ib, ic400mV @ 5mA, 100mA