Microsemi Corporation 1N66 Series

4 variants · Microsemi CorporationAll Discrete Semiconductors →

About the Microsemi Corporation 1N66 Series

The Microsemi Corporation 1N66 Series series groups 4 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common package of Bulk and speed of Fast Recovery =< 500ns, > 200mA (Io). Variants differ by case, current - reverse leakage @ vr and diode type, so you can match the exact case your application requires using the selection guide below. All listed Microsemi Corporation 1N66 Series part numbers are active and orderable.

Select a variant by

Case: A, Axial · SQ-MELF, A · SQ-MELF, D · TO-254-3, TO-254AA (Straight Leads)
Current - reverse leakage @ vr: 1 mA @ 45 V · 2 µA @ 880 V · 500 µA @ 75 V
Diode type: Schottky · Standard
Mounting: Surface Mount · Through Hole
Operating temperature - junction: -65°C~150°C · -65°C~175°C
Voltage - DC reverse (Vr): 45 V · 75 V · 880 V
Voltage - forward (Vf) (Max) @ if: 1 V @ 30 A · 1.4 V @ 1.4 A · 800 mV @ 10 mA
Capacitance @ vr,: - · 40pF @ 10V, 1MHz

Shared specifications

Package: Bulk
Speed: Fast Recovery =< 500ns, > 200mA (Io)

Variant comparison

Parameter	1N6629	1N6629US	1N6642U	1N6660
Case	A, Axial	SQ-MELF, A	SQ-MELF, D	TO-254-3, TO-254AA (Straight Leads)
Current - reverse leakage @ vr	2 µA @ 880 V	2 µA @ 880 V	500 µA @ 75 V	1 mA @ 45 V
Diode type	Standard	Standard	Standard	Schottky
Mounting	Through Hole	Surface Mount	Surface Mount	Surface Mount
Operating temperature - junction	-65°C~150°C	-65°C~150°C	-65°C~175°C	-65°C~150°C
Voltage - DC reverse (Vr)	880 V	880 V	75 V	45 V
Voltage - forward (Vf) (Max) @ if	1.4 V @ 1.4 A	1.4 V @ 1.4 A	800 mV @ 10 mA	1 V @ 30 A
Capacitance @ vr,	40pF @ 10V, 1MHz	40pF @ 10V, 1MHz	-	—

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