Microsemi Corporation 1N6629US
MPN1N6629US
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Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Diode type | Standard |
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 880 V |
| Voltage - forward (Vf) (Max) @ if | 1.4 V @ 1.4 A |
| Current - reverse leakage @ vr | 2 µA @ 880 V |
| Current - average rectified | 1.4A |
| Operating temperature - junction | -65°C~150°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Bulk |
| Case | SQ-MELF, A |
| Capacitance @ vr, | 40pF @ 10V, 1MHz |
| Reverse recovery time | 50 ns |