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Micron Technology MT53E256M16D1DS-046 WT:B — Interface & Transceivers

Micron MT53E256M16D1DS-046 WT:B LPDDR4, 4Gbit, 2.133 GHz

MPNMT53E256M16D1DS-046 WT:B
End of Life

Micron Technology MT53E256M16D1DS-046 WT:B, Mobile LPDDR4 SDRAM, 4Gbit, 256M x 16, 2.133 GHz, 1.1V, -30°C to 85°C, 200-WFBGA, Tray.

$9.73Ref. price · indicative, final on quote
Packaging200-WFBGA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

MT53E256M16D1DS-046 WT:B specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage1.1V
Frequency2.133 GHz
Operating temperature-30°C ~ 85°C (TC)
PackageTray
TechnologySDRAM - Mobile LPDDR4
Memory size4Gbit
Memory formatDRAM
Case200-WFBGA
Memory organization256M x 16

Product details

4 Gbit LPDDR4 in a 10×14.5 mm BGA

The MT53E256M16D1DS-046 WT:B is a 4 Gbit Mobile LPDDR4 SDRAM organized as 256M x 16, clocked at 2.133 GHz and running from a 1.1 V core supply. It ships in a 200-ball WFBGA package measuring 10×14.5 mm — the footprint and ball map match the JEDEC LPDDR4 standard, so the layout transfers across density upgrades within the same package code.

Memory density and bus width for the BOM

At 4 Gbit with a x16 data bus, this part delivers 512 MB per package. The 2.133 GHz clock rate corresponds to a 4266 MT/s data rate on the double-data-rate bus — the controller PHY must support that speed grade to close timing on the fly. The operating temperature range is -30°C to 85°C (TC), which covers the industrial envelope for most portable and embedded systems. The 1.1 V supply keeps the I/O and core on the same rail, simplifying the power tree.

Active production, RoHS3 compliant

The tray delivery format is standard for BGA devices in volume production.

Frequently asked questions

What is the closest functional second-source for MT53E256M16D1DS-046 WT:B?

The standard-temperature WT:B variant covers -30°C to 85°C (TC).